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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 3, Pages 314–318 (Mi phts7229)  
This article is cited in 2 scientific papers (total in 2 papers)

Spectroscopy, interaction with radiation

Terahertz emission upon the band-to-band excitation of Group-IV semiconductors at room temperature

A. O. Zahar'ina, A. V. Bobylevab, S. V. Egorovac, A. V. Andrianova

a Ioffe Institute, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c Saint-Petersburg State Mining Institute
Full-text PDF (296 kB) Citations (2)
Abstract: Terahertz emission upon the band-to-band excitation of Group-IV semiconductors (Si:B and Ge:Ga) at room temperature by a semiconductor laser emitting in the visible range (660 nm) is observed and investigated. It is established that, as the crystal temperature is elevated above room temperature, the emission intensity increases considerably, while the emission spectrum shifts to higher frequencies. The terahertz-emission spectra of germanium and silicon are quite similar to each other. The pump-intensity dependence of the terahertz-emission intensity is nearly linear. The above features make it possible to attribute the observed terahertz emission to the effect of crystal heating by absorbed pump radiation.
Received: 23.07.2014
Accepted: 25.08.2014
English version:
Semiconductors, 2015, Volume 49, Issue 3, Pages 305–308
DOI: https://doi.org/10.1134/S1063782615030240
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. O. Zahar'in, A. V. Bobylev, S. V. Egorov, A. V. Andrianov, “Terahertz emission upon the band-to-band excitation of Group-IV semiconductors at room temperature”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 314–318; Semiconductors, 49:3 (2015), 305–308
Citation in format AMSBIB
\Bibitem{ZahBobEgo15}
\by A.~O.~Zahar'in, A.~V.~Bobylev, S.~V.~Egorov, A.~V.~Andrianov
\paper Terahertz emission upon the band-to-band excitation of Group-IV semiconductors at room temperature
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 3
\pages 314--318
\mathnet{http://mi.mathnet.ru/phts7229}
\elib{https://elibrary.ru/item.asp?id=24195112}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 3
\pages 305--308
\crossref{https://doi.org/10.1134/S1063782615030240}
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  • https://www.mathnet.ru/eng/phts/v49/i3/p314
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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