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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 3, Pages 376–378 (Mi phts7239)  
This article is cited in 9 scientific papers (total in 9 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Electrical properties of Pd-oxide-InP structures

E. A. Grebenshchikovaa, V. V. Evstropova, N. D. Il'inskayaa, Yu. S. Mel'nikovb, O. Yu. Serebrennikovaa, V. G. Sidorovb, V. V. Sherstneva, Yu. P. Yakovleva

a Ioffe Institute, St. Petersburg
b St. Petersburg State Polytechnic University, St. Petersburg, 195251, Russia
Full-text PDF (257 kB) Citations (9)
Abstract: Pd-anodic oxide-InP metal-oxide-semiconductor (MOS) structures are fabricated to develop a hydrogen sensor capable of effectively operating at room temperature. The conduction mechanisms of the structures at 100–300 K are studied. It is found that the oxide behaves as ohmic resistance and the rectifying properties of the structures are determined by the potential barrier at the oxide-InP interface with the thermal-tunneling charge transport mechanism. The structures greatly change their characteristics in the presence of hydrogen in the ambient medium.
Received: 18.08.2014
Accepted: 25.08.2014
English version:
Semiconductors, 2015, Volume 49, Issue 3, Pages 364–366
DOI: https://doi.org/10.1134/S1063782615030094
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. A. Grebenshchikova, V. V. Evstropov, N. D. Il'inskaya, Yu. S. Mel'nikov, O. Yu. Serebrennikova, V. G. Sidorov, V. V. Sherstnev, Yu. P. Yakovlev, “Electrical properties of Pd-oxide-InP structures”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 376–378; Semiconductors, 49:3 (2015), 364–366
Citation in format AMSBIB
\Bibitem{GreEvsIli15}
\by E.~A.~Grebenshchikova, V.~V.~Evstropov, N.~D.~Il'inskaya, Yu.~S.~Mel'nikov, O.~Yu.~Serebrennikova, V.~G.~Sidorov, V.~V.~Sherstnev, Yu.~P.~Yakovlev
\paper Electrical properties of Pd-oxide-InP structures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 3
\pages 376--378
\mathnet{http://mi.mathnet.ru/phts7239}
\elib{https://elibrary.ru/item.asp?id=24195122}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 3
\pages 364--366
\crossref{https://doi.org/10.1134/S1063782615030094}
Linking options:
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  • https://www.mathnet.ru/eng/phts/v49/i3/p376
    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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