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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 3, Pages 379–384 (Mi phts7240)  
This article is cited in 11 scientific papers (total in 11 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy

K. J. Mynbaevab, A. V. Shilyaeva, N. L. Bazhenova, A. I. Izhnincd, I. I. Izhninc, N. N. Mikhailove, V. S. Varavine, S. A. Dvoretskiied

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Karat Scientific and Production Enterprise, L'vov
d Tomsk State University
e Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (216 kB) Citations (11)
Abstract: The photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy. A comparison of the photoluminescence spectra of HEFs grown on GaAs substrates (CdHgTe/GaAs) with the spectra of CdHgTe/Si HEFs demonstrates that acceptor states with energy depths of about 18 and 27 meV are specific to CdHgTe/GaAs HEFs. The possible nature of these states and its relation to the HEF synthesis conditions and, in particular, to the vacancy doping occurring under conditions of a mercury deficiency during the course of epitaxy and postgrowth processing are discussed.
Received: 02.09.2014
Accepted: 08.09.2014
English version:
Semiconductors, 2015, Volume 49, Issue 3, Pages 367–372
DOI: https://doi.org/10.1134/S1063782615030148
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. J. Mynbaev, A. V. Shilyaev, N. L. Bazhenov, A. I. Izhnin, I. I. Izhnin, N. N. Mikhailov, V. S. Varavin, S. A. Dvoretskii, “Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 379–384; Semiconductors, 49:3 (2015), 367–372
Citation in format AMSBIB
\Bibitem{MynShiBaz15}
\by K.~J.~Mynbaev, A.~V.~Shilyaev, N.~L.~Bazhenov, A.~I.~Izhnin, I.~I.~Izhnin, N.~N.~Mikhailov, V.~S.~Varavin, S.~A.~Dvoretskii
\paper Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 3
\pages 379--384
\mathnet{http://mi.mathnet.ru/phts7240}
\elib{https://elibrary.ru/item.asp?id=24195123}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 3
\pages 367--372
\crossref{https://doi.org/10.1134/S1063782615030148}
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  • https://www.mathnet.ru/eng/phts/v49/i3/p379
    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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