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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 3, Pages 421–425 (Mi phts7247)  
This article is cited in 4 scientific papers (total in 4 papers)

Manufacturing, processing, testing of materials and structures

Formation of Si nanocrystals in multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures: Synchrotron and photoluminescence data

S. Yu. Turishcheva, V. A. Terekhova, D. A. Koyudaa, D. E. Spirina, E. V. Parinovaa, D. N. Nesterova, D. A. Grachevb, I. A. Karabanovab, A. V. Ershovb, A. I. Mashinb, È. P. Domashevskayaa

a Voronezh State University
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (171 kB) Citations (4)
Abstract: The results of X-ray absorption near-edge structure spectroscopy data obtained with synchrotron radiation for multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures annealed at temperatures of 500–1100$^\circ$C are reported. The data show that, upon high-temperature annealing ($\sim$ 1100$^\circ$C), the structures are modified. The modification is attributed to the formation of Si nanocrystals in deep layers of the structures. At the same time, the structures exhibit size-dependent high-intensity photoluminescence in the photon-energy range 1.4–1.52 eV.
Received: 22.04.2014
Accepted: 12.05.2014
English version:
Semiconductors, 2015, Volume 49, Issue 3, Pages 409–413
DOI: https://doi.org/10.1134/S1063782615030227
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, D. E. Spirin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, A. V. Ershov, A. I. Mashin, È. P. Domashevskaya, “Formation of Si nanocrystals in multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures: Synchrotron and photoluminescence data”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 421–425; Semiconductors, 49:3 (2015), 409–413
Citation in format AMSBIB
\Bibitem{TurTerKoy15}
\by S.~Yu.~Turishchev, V.~A.~Terekhov, D.~A.~Koyuda, D.~E.~Spirin, E.~V.~Parinova, D.~N.~Nesterov, D.~A.~Grachev, I.~A.~Karabanova, A.~V.~Ershov, A.~I.~Mashin, \`E.~P.~Domashevskaya
\paper Formation of Si nanocrystals in multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures: Synchrotron and photoluminescence data
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 3
\pages 421--425
\mathnet{http://mi.mathnet.ru/phts7247}
\elib{https://elibrary.ru/item.asp?id=24195130}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 3
\pages 409--413
\crossref{https://doi.org/10.1134/S1063782615030227}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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