Low-temperature conductivity in CuGaS$_2$ single crystals

CuGaS$_2$ single crystals are grown by the Bridgman–Stockbarger method. X-ray diffraction and Raman studies are performed. It is shown that the conductivity at low temperatures has an activation mechanism: in the range of 100–300 K, impurity conduction with an acceptor activation energy of 12 meV dominates; at temperatures below 100 K, Mott conductivity, i.e., so-called hopping conductivity with a variable hop length prevails. The density of localized states and the average carrier hop length are estimated.