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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 4, Pages 519–523 (Mi phts7266)  
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor physics

Electroluminescent 1.5-$\mu$m light-emitting diodes based on $p^+$-Si/NC $\beta$-FeSi$_2$/$n$-Si structures

T. S. Shamirzaevab, N. G. Galkincd, E. A. Chusovitinc, D. L. Goroshkoc, A. V. Shevlyaginc, A. K. Gutakovskiiae, A. A. Saranindc, A. V. Latysheva

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
c Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
d Far Eastern Federal University, Vladivostok
e Novosibirsk State University
Full-text PDF (1243 kB) Citations (1)
Abstract: The electroluminescence efficiency of silicon light-emitting diode structures with several layers of $\beta$-FeSi$_2$ nanocrystallites embedded in the $p$–$n$ junction is investigated. The nanocrystallites were formed by either solid-phase epitaxy or a combination of reactive and solid-phase epitaxy. For the structures in which the nanocrystallites were formed by the combined method, electroluminescence is observed only at low temperatures (below 70K). This is indicative of a high concentration of defects acting as nonradiative-recombination centers. For the structures with nanocrystallites formed by solid-phase epitaxy, intense electroluminescence is observed up to room temperature. The dependence of the electroluminescence intensity on the size of the nanocrystallites is studied.
Received: 04.08.2014
Accepted: 25.08.2014
English version:
Semiconductors, 2015, Volume 49, Issue 4, Pages 508–512
DOI: https://doi.org/10.1134/S1063782615040211
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: T. S. Shamirzaev, N. G. Galkin, E. A. Chusovitin, D. L. Goroshko, A. V. Shevlyagin, A. K. Gutakovskii, A. A. Saranin, A. V. Latyshev, “Electroluminescent 1.5-$\mu$m light-emitting diodes based on $p^+$-Si/NC $\beta$-FeSi$_2$/$n$-Si structures”, Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 519–523; Semiconductors, 49:4 (2015), 508–512
Citation in format AMSBIB
\Bibitem{ShaGalChu15}
\by T.~S.~Shamirzaev, N.~G.~Galkin, E.~A.~Chusovitin, D.~L.~Goroshko, A.~V.~Shevlyagin, A.~K.~Gutakovskii, A.~A.~Saranin, A.~V.~Latyshev
\paper Electroluminescent 1.5-$\mu$m light-emitting diodes based on $p^+$-Si/NC $\beta$-FeSi$_2$/$n$-Si structures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 4
\pages 519--523
\mathnet{http://mi.mathnet.ru/phts7266}
\elib{https://elibrary.ru/item.asp?id=24195149}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 4
\pages 508--512
\crossref{https://doi.org/10.1134/S1063782615040211}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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