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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 5, Pages 584–587
(Mi phts7277)
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This article is cited in 3 scientific papers (total in 3 papers)
Electronic properties of semiconductors
Effect of spin-orbit interaction on the electronic structure of indium-antimonide $d$ bands
V. V. Sobolev, D. A. Perevoshchikov Udmurt State University, Izhevsk
Abstract:
The bands and densities of states of d bands in indium antimonide (InSb) are determined taking into account and disregarding the spin-orbit interaction. It is established that taking into account the effect of spin-orbit interaction results also in a substantial change in the dispersion of the obtained bands instead of only in the doublet splitting of the band of core d levels at $\sim$ (0.79–0.86) eV. It is established that it is indium 4$d$ states with $e_g$ and $t_{2g}$ symmetry that give the main contribution to the density of states. The calculations are carried out by the LAPW method with the exchange-correlation potential in the generalized gradient approximation (LAPW + GGA).
Received: 16.04.2014 Accepted: 29.09.2014
Citation:
V. V. Sobolev, D. A. Perevoshchikov, “Effect of spin-orbit interaction on the electronic structure of indium-antimonide $d$ bands”, Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 584–587; Semiconductors, 49:5 (2015), 570–573
Linking options:
https://www.mathnet.ru/eng/phts7277 https://www.mathnet.ru/eng/phts/v49/i5/p584
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