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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 5, Pages 596–598 (Mi phts7280)  

This article is cited in 5 scientific papers (total in 5 papers)

Electronic properties of semiconductors

Temperature dependence of the band gap of Cu$_2$ZnSnS$_4$ single crystals

I. V. Bondar'

Belarussian State University of Computer Science and Radioelectronic Engineering
Full-text PDF (186 kB) Citations (5)
Abstract: The transmittance spectra of Cu$_2$ZnSnS$_4$ single crystals grown by the technique of chemical gastransport reactions are studied in the region of the fundamental absorption edge in the temperature range $T$ = 20 to 300 K. From the experimental spectra, the band gap of the compound is determined and the temperature dependence of the band gap is established. It is found that the band gap increases, as temperature is increased. It is shown that the temperature dependence is adequately described by the corresponding theoretical expression.
Received: 30.09.2014
Accepted: 20.10.2014
English version:
Semiconductors, 2015, Volume 49, Issue 5, Pages 582–585
DOI: https://doi.org/10.1134/S106378261505005X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Bondar', “Temperature dependence of the band gap of Cu$_2$ZnSnS$_4$ single crystals”, Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 596–598; Semiconductors, 49:5 (2015), 582–585
Citation in format AMSBIB
\Bibitem{Bon15}
\by I.~V.~Bondar'
\paper Temperature dependence of the band gap of Cu$_2$ZnSnS$_4$ single crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 5
\pages 596--598
\mathnet{http://mi.mathnet.ru/phts7280}
\elib{https://elibrary.ru/item.asp?id=24195163}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 5
\pages 582--585
\crossref{https://doi.org/10.1134/S106378261505005X}
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  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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