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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 5, Pages 596–598
(Mi phts7280)
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This article is cited in 5 scientific papers (total in 5 papers)
Electronic properties of semiconductors
Temperature dependence of the band gap of Cu$_2$ZnSnS$_4$ single crystals
I. V. Bondar' Belarussian State University of Computer Science and Radioelectronic Engineering
Abstract:
The transmittance spectra of Cu$_2$ZnSnS$_4$ single crystals grown by the technique of chemical gastransport reactions are studied in the region of the fundamental absorption edge in the temperature range $T$ = 20 to 300 K. From the experimental spectra, the band gap of the compound is determined and the temperature dependence of the band gap is established. It is found that the band gap increases, as temperature is increased. It is shown that the temperature dependence is adequately described by the corresponding theoretical expression.
Received: 30.09.2014 Accepted: 20.10.2014
Citation:
I. V. Bondar', “Temperature dependence of the band gap of Cu$_2$ZnSnS$_4$ single crystals”, Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 596–598; Semiconductors, 49:5 (2015), 582–585
Linking options:
https://www.mathnet.ru/eng/phts7280 https://www.mathnet.ru/eng/phts/v49/i5/p596
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