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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 5, Pages 652–657
(Mi phts7291)
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This article is cited in 26 scientific papers (total in 26 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Photoluminescence of GaAs/AlGaAs quantum ring arrays
Yu. D. Sibirmovskya, I. S. Vasil'evskiia, A. N. Vinichenkoa, I. S. Eremina, D. M. Zhigunovb, N. I. Kargina, O. S. Kolentsovaa, P. A. Martyuka, M. N. Strikhanova a National Engineering Physics Institute "MEPhI", Moscow
b Lomonosov Moscow State University, Faculty of Physics
Abstract:
Samples of epitaxial structures with GaAs/AlGaAs quantum rings different in morphology are grown by droplet epitaxy. The photoluminescence spectra of the samples are recorded at temperatures of 20–90 and 300 K. Intense peaks defined by quantum confinement of the charge-carrier energy in the quantum rings are observed in the optical region. The peaks are identified by estimating the energy of the ground state of electrons and holes in GaAs quantum rings and by recording the spectra of the samples after removing the layers with the quantum rings by etching. The average dimensions of the quantum rings are determined by atomic force microscopy and scanning electron microscopy. Some inferences about the factors that influence the emission spectrum and intensity of the epitaxial structures with quantum rings are drawn.
Received: 16.10.2014 Accepted: 24.10.2014
Citation:
Yu. D. Sibirmovsky, I. S. Vasil'evskii, A. N. Vinichenko, I. S. Eremin, D. M. Zhigunov, N. I. Kargin, O. S. Kolentsova, P. A. Martyuk, M. N. Strikhanov, “Photoluminescence of GaAs/AlGaAs quantum ring arrays”, Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 652–657; Semiconductors, 49:5 (2015), 638–643
Linking options:
https://www.mathnet.ru/eng/phts7291 https://www.mathnet.ru/eng/phts/v49/i5/p652
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