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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 5, Pages 688–692 (Mi phts7297)  
This article is cited in 9 scientific papers (total in 9 papers)

Semiconductor physics

Thermal resistance of ultra-small-diameter disk microlasers

A. E. Zhukovabc, N. V. Kryzhanovskayaac, M. V. Maksimovacd, A. A. Lipovskiiac, A. V. Savel'evabc, I. I. Shostaka, È. I. Moiseeva, Yu. V. Kudashovaa, M. M. Kulaginad, S. I. Troshkovd

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Saint Petersburg Physics and Technology Centre for Research and Education
c Peter the Great St. Petersburg Polytechnic University
d Ioffe Institute, St. Petersburg
Full-text PDF (301 kB) Citations (9)
Abstract: The thermal resistance of AlGaAs/GaAs microlasers of the suspended-disk type with a diameter of 1.7–4 $\mu$m and InAs/InGaAs quantum dots in the active region is inversely proportional to the squared diameter of the microdisk. The proportionality factor is 3.2 $\times$ 10$^{-3}$ (K $\cdot$ cm$^2$)/W, and the thermal resistance is 120–20$^\circ$C/mW.
Received: 06.11.2014
Accepted: 12.11.2014
English version:
Semiconductors, 2015, Volume 49, Issue 5, Pages 674–678
DOI: https://doi.org/10.1134/S1063782615050279
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. E. Zhukov, N. V. Kryzhanovskaya, M. V. Maksimov, A. A. Lipovskii, A. V. Savel'ev, I. I. Shostak, È. I. Moiseev, Yu. V. Kudashova, M. M. Kulagina, S. I. Troshkov, “Thermal resistance of ultra-small-diameter disk microlasers”, Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 688–692; Semiconductors, 49:5 (2015), 674–678
Citation in format AMSBIB
\Bibitem{ZhuKryMak15}
\by A.~E.~Zhukov, N.~V.~Kryzhanovskaya, M.~V.~Maksimov, A.~A.~Lipovskii, A.~V.~Savel'ev, I.~I.~Shostak, \`E.~I.~Moiseev, Yu.~V.~Kudashova, M.~M.~Kulagina, S.~I.~Troshkov
\paper Thermal resistance of ultra-small-diameter disk microlasers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 5
\pages 688--692
\mathnet{http://mi.mathnet.ru/phts7297}
\elib{https://elibrary.ru/item.asp?id=24195180}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 5
\pages 674--678
\crossref{https://doi.org/10.1134/S1063782615050279}
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  • https://www.mathnet.ru/eng/phts/v49/i5/p688
    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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