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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 5, Pages 715–718 (Mi phts7301)  
This article is cited in 14 scientific papers (total in 14 papers)

Semiconductor physics

Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures

R. V. Levinab, A. E. Marichevac, M. Z. Shvartsa, E. P. Marukhinaa, V. P. Khvostikova, B. V. Pushniiab, M. N. Mizerovb, V. M. Andreeva

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (306 kB) Citations (14)
Abstract: Results obtained in the development of a metal-organic vapor-phase epitaxy (MOVPE) technology and in studies of the electrical parameters of photovoltaic converters based on heterostructures in the InP/InGaAsP system for the spectral range 0.95–1.2 $\mu$m are presented. A MOVPE technique is developed for obtaining and doping InGaAsP solid solutions around the spinodal dissociation region with a band-gap width of about 1.0 eV. Photovoltaic converters of 1000 concentrated sunlight are fabricated.
Received: 11.11.2014
Accepted: 17.11.2014
English version:
Semiconductors, 2015, Volume 49, Issue 5, Pages 700–703
DOI: https://doi.org/10.1134/S1063782615050139
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. V. Levin, A. E. Marichev, M. Z. Shvarts, E. P. Marukhina, V. P. Khvostikov, B. V. Pushnii, M. N. Mizerov, V. M. Andreev, “Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures”, Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 715–718; Semiconductors, 49:5 (2015), 700–703
Citation in format AMSBIB
\Bibitem{LevMarShv15}
\by R.~V.~Levin, A.~E.~Marichev, M.~Z.~Shvarts, E.~P.~Marukhina, V.~P.~Khvostikov, B.~V.~Pushnii, M.~N.~Mizerov, V.~M.~Andreev
\paper Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 5
\pages 715--718
\mathnet{http://mi.mathnet.ru/phts7301}
\elib{https://elibrary.ru/item.asp?id=24195184}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 5
\pages 700--703
\crossref{https://doi.org/10.1134/S1063782615050139}
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    • This publication is cited in the following 14 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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