Effect of copper on the recombination activity of extended defects in silicon

The effect of copper atoms introduced by high-temperature diffusion on the recombination properties of dislocations and dislocation trails in $p$-type single-crystal silicon is studied by the electron-beam-induced current technique. It is shown that, in contrast to dislocations, dislocation trails exhibit an increase in recombination activity after the introduction of copper. Bright contrast appearance in the vicinity of dislocation trails is detected after the diffusion of copper and quenching of the samples. The contrast depends on the defect density in these trails.