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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 6, Pages 741–745 (Mi phts7306)  
This article is cited in 6 scientific papers (total in 6 papers)

Proceedings of the Conference ''Silicon-2014'', Irkutsk, July 7-12, 2014
Surface, interfaces, thin films

Recombination activity of interfaces in multicrystalline silicon

S. M. Peshcherovaa, E. B. Yakimovb, A. I. Nepomnyashchikha, L. A. Pavlovaa, O. V. Feklisovab

a Vinogradov Institute of Geochemistry and Analytical Chemistry, Siberian Branch, Russian Academy of Sciences
b Institute of Microelectronics Technology and High-Purity Materials RAS
Full-text PDF (820 kB) Citations (6)
Abstract: The electrical activity of grain boundaries in multicrystalline silicon grown from metallurgical silicon by the Bridgman method is investigated by the method of electron-beam induced current. The main tendencies of atypical manifestation of the local electrical activity of $\Sigma3\{111\}$ and $\Sigma9\{110\}$ special boundaries are revealed. The structural features of the grain boundaries after selective etching and the impurity-distribution characteristics in multicrystalline silicon are determined by the methods of electron backscattering diffraction and electron-probe microanalysis.
Received: 27.10.2014
Accepted: 05.11.2014
English version:
Semiconductors, 2015, Volume 49, Issue 6, Pages 724–728
DOI: https://doi.org/10.1134/S1063782615060196
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova, “Recombination activity of interfaces in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 741–745; Semiconductors, 49:6 (2015), 724–728
Citation in format AMSBIB
\Bibitem{PesYakNep15}
\by S.~M.~Peshcherova, E.~B.~Yakimov, A.~I.~Nepomnyashchikh, L.~A.~Pavlova, O.~V.~Feklisova
\paper Recombination activity of interfaces in multicrystalline silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 6
\pages 741--745
\mathnet{http://mi.mathnet.ru/phts7306}
\elib{https://elibrary.ru/item.asp?id=24195189}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 6
\pages 724--728
\crossref{https://doi.org/10.1134/S1063782615060196}
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  • https://www.mathnet.ru/eng/phts/v49/i6/p741
    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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