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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 6, Pages 758–762 (Mi phts7309)  
This article is cited in 2 scientific papers (total in 2 papers)

Proceedings of the Conference ''Silicon-2014'', Irkutsk, July 7-12, 2014
Micro- and nanocrystalline, porous, composite semiconductors

Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents

Ya. L. Shabelnikovaa, E. B. Yakimova, D. P. Nikolaevb, M. V. Chukalinaa

a Institute of Microelectronics Technology and High-Purity Materials RAS
b Institute for Information Transmission Problems of the Russian Academy of Sciences (Kharkevich Institute), Moscow
Full-text PDF (1621 kB) Citations (2)
Abstract: A solar cell on a wafer of multicrystalline silicon containing grain boundaries was studied by the induced-current method. The sample was scanned by an electron beam and by a laser beam at two wavelengths (980 and 635 nm). The recorded induced-current maps were aligned by means of a specially developed code, that enabled to analyze the same part of the grain boundary for three types of measurements. Optimization of the residual between simulated induced-current profiles and those obtained experimentally yielded quantitative estimates of the characteristics of a sample and its defects: the diffusion length of minority carriers and recombination velocity at the grain boundary.
Received: 27.11.2014
Accepted: 04.12.2014
English version:
Semiconductors, 2015, Volume 49, Issue 6, Pages 741–745
DOI: https://doi.org/10.1134/S1063782615060226
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Ya. L. Shabelnikova, E. B. Yakimov, D. P. Nikolaev, M. V. Chukalina, “Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 758–762; Semiconductors, 49:6 (2015), 741–745
Citation in format AMSBIB
\Bibitem{ShaYakNik15}
\by Ya.~L.~Shabelnikova, E.~B.~Yakimov, D.~P.~Nikolaev, M.~V.~Chukalina
\paper Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 6
\pages 758--762
\mathnet{http://mi.mathnet.ru/phts7309}
\elib{https://elibrary.ru/item.asp?id=24195192}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 6
\pages 741--745
\crossref{https://doi.org/10.1134/S1063782615060226}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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