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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 6, Pages 767–771 (Mi phts7311)  
This article is cited in 25 scientific papers (total in 25 papers)

Proceedings of the Conference ''Silicon-2014'', Irkutsk, July 7-12, 2014
Manufacturing, processing, testing of materials and structures

Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation

Zh. V. Smaginaa, A. V. Dvurechenskiiab, V. A. Selezneva, P. A. Kuchinskayaa, V. A. Armbristera, V. A. Zinovyeva, N. P. Stepinaa, A. F. Zinov'evaa, A. V. Nenashevab, A. K. Gutakovskiiab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Full-text PDF (539 kB) Citations (25)
Abstract: The growth of Ge nanoclusters on a prepatterned Si (100) surface formed by imprint lithography in combination with subsequent irradiation with Ge$^+$ ions is studied. The prepatterned surface presents a system of parallel 10-nm-wide grooves repeating with a period of 180 nm. Irradiation of the substrate was conducted at two temperatures, room temperature (cold irradiation) and 400$^\circ$C (hot irradiation). It is shown that, during epitaxy (550–700$^\circ$C), the residual radiation defects located in the bulk under the grooves suppress the nucleation of Ge nanoclusters in the grooves. In the case of prepatterned substrates, from which imperfect regions are completely removed, nanoclusters grow in the grooves.
Received: 06.11.2014
Accepted: 20.11.2014
English version:
Semiconductors, 2015, Volume 49, Issue 6, Pages 749–752
DOI: https://doi.org/10.1134/S1063782615060238
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Zh. V. Smagina, A. V. Dvurechenskii, V. A. Seleznev, P. A. Kuchinskaya, V. A. Armbrister, V. A. Zinovyev, N. P. Stepina, A. F. Zinov'eva, A. V. Nenashev, A. K. Gutakovskii, “Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 767–771; Semiconductors, 49:6 (2015), 749–752
Citation in format AMSBIB
\Bibitem{SmaDvuSel15}
\by Zh.~V.~Smagina, A.~V.~Dvurechenskii, V.~A.~Seleznev, P.~A.~Kuchinskaya, V.~A.~Armbrister, V.~A.~Zinovyev, N.~P.~Stepina, A.~F.~Zinov'eva, A.~V.~Nenashev, A.~K.~Gutakovskii
\paper Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 6
\pages 767--771
\mathnet{http://mi.mathnet.ru/phts7311}
\elib{https://elibrary.ru/item.asp?id=24195194}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 6
\pages 749--752
\crossref{https://doi.org/10.1134/S1063782615060238}
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    • This publication is cited in the following 25 articles:
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