Specific features of Hall measurements in doped semiconductors

The limits of applicability of the Hall method for separate determination of the impurity concentration are considered for the case of doping with only one main impurity. A diagram is constructed in the coordinate plane, with the dimensionless (because different semiconductors are used) parameter $N^{1/3}a$ plotted along the abscissa axis, and the degree of impurity compensation $K$, along the ordinate axis. The resulting curve is both a generalization of the experimental data available in publications and the result of the present study of weakly compensated Si. The curve divides the $N^{1/3}a$–$K$ plane into two parts, with the Hall method applicable for determining the impurity concentrations in part I and inapplicable in part II.