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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 6, Pages 804–809
(Mi phts7318)
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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation
V. A. Kukushkinab, N. V. Baidusbc, A. V. Zdoroveyshchevc a Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
It is demonstrated that the efficiency of surface plasmon-polariton excitation at a metal-semiconductor interface by active quantum dots can be determined from measurements of the polarization characteristics of the output radiation. Experimentally, the proposed diagnostic method is based on finding the ratio of the intensities of the output radiation with polarizations orthogonal and parallel to the nanoheterostructure plane for two different distances between the quantum-dot layer and the metal-semiconductor interface. These data are then used to obtain the unknown parameters in the proposed mathematical model which makes it possible to calculate the rate of surface plasmon-polariton excitation by active quantum dots. As a result, this rate can be determined without complicated expensive equipment for fast time-resolved measurements.
Received: 30.06.2014 Accepted: 14.11.2014
Citation:
V. A. Kukushkin, N. V. Baidus, A. V. Zdoroveyshchev, “Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 804–809; Semiconductors, 49:6 (2015), 785–790
Linking options:
https://www.mathnet.ru/eng/phts7318 https://www.mathnet.ru/eng/phts/v49/i6/p804
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