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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 6, Pages 810–816
(Mi phts7319)
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This article is cited in 9 scientific papers (total in 9 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides
E. D. Mishinaa, N. È. Sherstyuka, A. P. Shestakovaa, S. D. Lavrova, S. V. Seminab, A. S. Sigova, A. Mitioglucd, S. Anghelce, L. Kulyukc a MIREA — Russian Technological University, Moscow
b Radboud University Nijmegen, Institute for Molecules and Materials, 6500 Nijmegen, The Netherlands
c Institute of Applied Physics, Academy of Sciences of Moldova,
MD-2028 Chisinau, Republic of Moldova
d Laboratoire National des Champs Magnétiques Intenses, 31400 Toulouse, France
e Ruhr-Universitat Bochum, Anorganische Chemie III,
D-44801 Bochum, Germany
Abstract:
The results of studying the optical properties of nanoscale single crystals of MoS$_2$ : Cl$_2$ and WS$_2$ : Br$_2$ semiconductor compounds are presented. In microscopic images obtained at the wavelength of the second (400 nm), edge effects are detected, which consist in enhancement or reduction in the second-harmonic signal intensity. Unlike previously proposed interference mechanisms of edge effects, non-interference mechanisms are considered. The occurrence of edge effects is associated with either an increased Cl$_2$ and Br$_2$ halogen molecule concentration or with an electrically induced second harmonic caused by band bending at the edges of individual crystal layers.
Received: 16.12.2014 Accepted: 22.12.2014
Citation:
E. D. Mishina, N. È. Sherstyuk, A. P. Shestakova, S. D. Lavrov, S. V. Semin, A. S. Sigov, A. Mitioglu, S. Anghel, L. Kulyuk, “Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 810–816; Semiconductors, 49:6 (2015), 791–796
Linking options:
https://www.mathnet.ru/eng/phts7319 https://www.mathnet.ru/eng/phts/v49/i6/p810
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