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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 6, Pages 839–842
(Mi phts7323)
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This article is cited in 10 scientific papers (total in 10 papers)
Semiconductor physics
On the tensosensitivity of a $p$–$n$ junction under illumination
G. Gulyamova, A. G. Gulyamovab a Namangan Engineering Pedagogical Institute
b Physical-Technical Institute, Uzbekistan Academy of Sciences
Abstract:
The effect of illumination on the tensosensitivity of a $p$–$n$ junction is considered. It is shown that the tensosensitivity of an illuminated $p$–$n$ junction can be controlled by a constant deformation $\varepsilon_0$, the frequency of illumination $\omega$, and its intensity $I_0$. It is established that the absorption coefficient near the critical points can vary greatly under the action of deformation and, hence, the tensosensitivity coefficient of the $p$–$n$ junction can attain anomalously large values.
Received: 29.05.2014 Accepted: 04.09.2014
Citation:
G. Gulyamov, A. G. Gulyamov, “On the tensosensitivity of a $p$–$n$ junction under illumination”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 839–842; Semiconductors, 49:6 (2015), 819–822
Linking options:
https://www.mathnet.ru/eng/phts7323 https://www.mathnet.ru/eng/phts/v49/i6/p839
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