Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 6, Pages 843–846 (Mi phts7324)  

This article is cited in 6 scientific papers (total in 6 papers)

Semiconductor physics

High-efficiency plasma treatment for surface modification of LPCVD ZnO

D. Andronikovab, A. Abramovab, E. Terukovabc, A. Vinogradovb, A. Ankudinovb, V. Afanasjevc

a R&D Center of Thin Film Technologies in Energetics under Ioffe Institute LLC, 194064 St. Petersburg, Russia
b Ioffe Institute, St. Petersburg
c Saint Petersburg Electrotechnical University "LETI", 197376 St. Petersburg, Russia
Full-text PDF (990 kB) Citations (6)
Abstract: Plasma treatment of LPCVD Boron-doped ZnO aimed at surface modification of the films has been performed. We have shown that five minutes treatment with RF magnetron Ar plasma can be sufficient to transform surface morpholohy from as-deposited V-type to U-type, which better suits the growth and enhances the properties of post-deposited microcrystalline silicon as a material for PV modules. Effect of plasma treatment on optical and electrical properties and surface morpholohy has been studied. Comparative analysis of the acquired results has shown that short time treatment can provide required changes in curface morpholohy without significant deterioration of structure and electrical and optical properties of treated films, while long time treatment results in reduction of electronic properties most probably caused by excess defect formation at the surface of ZnO films. These results show that, despite promising outlooks, RF magnetron plasma treatment of ZnO for the production of PV modules requires careful optimization.
Received: 11.09.2014
Accepted: 23.09.2014
English version:
Semiconductors, 2015, Volume 49, Issue 6, Pages 823–826
DOI: https://doi.org/10.1134/S1063782615060032
Bibliographic databases:
Document Type: Article
Language: English
Citation: D. Andronikov, A. Abramov, E. Terukov, A. Vinogradov, A. Ankudinov, V. Afanasjev, “High-efficiency plasma treatment for surface modification of LPCVD ZnO”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 843–846; Semiconductors, 49:6 (2015), 823–826
Citation in format AMSBIB
\Bibitem{AndAbrTer15}
\by D.~Andronikov, A.~Abramov, E.~Terukov, A.~Vinogradov, A.~Ankudinov, V.~Afanasjev
\paper High-efficiency plasma treatment for surface modification of LPCVD ZnO
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 6
\pages 843--846
\mathnet{http://mi.mathnet.ru/phts7324}
\elib{https://elibrary.ru/item.asp?id=24195207}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 6
\pages 823--826
\crossref{https://doi.org/10.1134/S1063782615060032}
Linking options:
  • https://www.mathnet.ru/eng/phts7324
  • https://www.mathnet.ru/eng/phts/v49/i6/p843
  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025