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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 7, Pages 925–931
(Mi phts7335)
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This article is cited in 2 scientific papers (total in 2 papers)
Surface, interfaces, thin films
Nitridation of an unreconstructed and reconstructed $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ (0001) sapphire surface in an ammonia flow
D. S. Milakhina, T. V. Malina, V. G. Mansurova, Yu. G. Galitsyna, K. S. Zhuravlevab a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Abstract:
This paper is devoted to the study of the nitridation of unreconstructed and reconstructed $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ (0001) sapphire surfaces in an ammonia flow by reflection high-energy electron diffraction (RHEED). The experimental results show that sapphire nitridation occurs on the unreconstructed (1 $\times$ 1) surface, which results in AlN phase formation on the substrate surface. However, if sapphire nitridation is preceded by high-temperature annealing (1150$^\circ$C) resulting in sapphire surface reconstruction with formation of the $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ surface, the crystalline AlN phase on the sapphire surface is not formed during surface exposure to an ammonia flow.
Received: 12.11.2014 Accepted: 25.11.2014
Citation:
D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu. G. Galitsyn, K. S. Zhuravlev, “Nitridation of an unreconstructed and reconstructed $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ (0001) sapphire surface in an ammonia flow”, Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 925–931; Semiconductors, 49:7 (2015), 905–910
Linking options:
https://www.mathnet.ru/eng/phts7335 https://www.mathnet.ru/eng/phts/v49/i7/p925
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