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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 7, Pages 932–935 (Mi phts7336)  
This article is cited in 17 scientific papers (total in 17 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Investigation of the optical properties of GaAs with $\delta$-Si doping grown by molecular-beam epitaxy at low temperatures

D. V. Lavrukhinab, A. E. Yachmenevab, A. S. Bugaevab, G. B. Galieva, E. A. Klimova, R. A. Khabibullinab, D. S. Ponomarevab, P. P. Maltseva

a V. G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
b Bauman Moscow State Technical University
Full-text PDF (200 kB) Citations (17)
Abstract: Molecular-beam epitaxy is used for the preparation of structures based on “low-temperature” grown GaAs with introduced d-Si doping. Specific features in the photon-energy range of 1.28–1.48 eV are observed in the photoluminescence spectrum after structures annealing at temperatures of 520 and 580$^\circ$C; these features are related to the formation of point defects and their complexes. The “pump–probe” light transmission measurements reveal that the characteristic lifetimes of nonequilibrium carriers in the fabricated structures amount to $\tau_c\approx$ 1.2–1.5 ps.
Received: 26.11.2014
Accepted: 15.12.2014
English version:
Semiconductors, 2015, Volume 49, Issue 7, Pages 911–914
DOI: https://doi.org/10.1134/S1063782615070179
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. V. Lavrukhin, A. E. Yachmenev, A. S. Bugaev, G. B. Galiev, E. A. Klimov, R. A. Khabibullin, D. S. Ponomarev, P. P. Maltsev, “Investigation of the optical properties of GaAs with $\delta$-Si doping grown by molecular-beam epitaxy at low temperatures”, Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 932–935; Semiconductors, 49:7 (2015), 911–914
Citation in format AMSBIB
\Bibitem{LavYacBug15}
\by D.~V.~Lavrukhin, A.~E.~Yachmenev, A.~S.~Bugaev, G.~B.~Galiev, E.~A.~Klimov, R.~A.~Khabibullin, D.~S.~Ponomarev, P.~P.~Maltsev
\paper Investigation of the optical properties of GaAs with $\delta$-Si doping grown by molecular-beam epitaxy at low temperatures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 7
\pages 932--935
\mathnet{http://mi.mathnet.ru/phts7336}
\elib{https://elibrary.ru/item.asp?id=24195220}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 7
\pages 911--914
\crossref{https://doi.org/10.1134/S1063782615070179}
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    • This publication is cited in the following 17 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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