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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 7, Pages 951–955 (Mi phts7339)  
Semiconductor structures, low-dimensional systems, quantum phenomena

Resistance of 4H-SiC Schottky barriers at high forward-current densities

P. A. Ivanov, T. P. Samsonova, N. D. Il'inskaya, O. Yu. Serebrennikova, O. I. Kon'kov, A. S. Potapov

Ioffe Institute, St. Petersburg
Full-text PDF (159 kB)
Abstract: The resistance of Schottky barriers based on 4H-SiC is experimentally determined at high forward-current densities. The measured resistance is found to be significantly higher than the resistance predicted by classical mechanisms of electron transport in Schottky contacts. An assumption concerning the crucial contribution of the tunnel-transparent intermediate oxide layer between the metal and semiconductor to the barrier resistance is proposed and partially justified.
Received: 17.12.2014
Accepted: 25.12.2014
English version:
Semiconductors, 2015, Volume 49, Issue 7, Pages 930–934
DOI: https://doi.org/10.1134/S1063782615070106
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Ivanov, T. P. Samsonova, N. D. Il'inskaya, O. Yu. Serebrennikova, O. I. Kon'kov, A. S. Potapov, “Resistance of 4H-SiC Schottky barriers at high forward-current densities”, Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 951–955; Semiconductors, 49:7 (2015), 930–934
Citation in format AMSBIB
\Bibitem{IvaSamIli15}
\by P.~A.~Ivanov, T.~P.~Samsonova, N.~D.~Il'inskaya, O.~Yu.~Serebrennikova, O.~I.~Kon'kov, A.~S.~Potapov
\paper Resistance of 4\emph{H}-SiC Schottky barriers at high forward-current densities
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 7
\pages 951--955
\mathnet{http://mi.mathnet.ru/phts7339}
\elib{https://elibrary.ru/item.asp?id=24195223}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 7
\pages 930--934
\crossref{https://doi.org/10.1134/S1063782615070106}
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