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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 7, Pages 999–1002 (Mi phts7349)  
Semiconductor physics

Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC $p^+$–$n$–$n^+$ diodes at low temperatures (77 K)

P. A. Ivanov, A. S. Potapov, T. P. Samsonova

Ioffe Institute, St. Petersburg
Full-text PDF (292 kB)
Abstract: The low temperature (77 K) transient switch-on characteristics of 4H-SiC $p^+$–$n$–$n^+$ diodes are measured in the pulse mode. Using a simple analytical model, the effect of impurity breakdown in a heavily doped $p^+$-type emitter on the current rise dynamics after applying high-amplitude forward-bias pulses to the diode is explained.
Received: 18.11.2014
Accepted: 25.11.2014
English version:
Semiconductors, 2015, Volume 49, Issue 7, Pages 976–979
DOI: https://doi.org/10.1134/S1063782615070118
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Ivanov, A. S. Potapov, T. P. Samsonova, “Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC $p^+$–$n$–$n^+$ diodes at low temperatures (77 K)”, Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 999–1002; Semiconductors, 49:7 (2015), 976–979
Citation in format AMSBIB
\Bibitem{IvaPotSam15}
\by P.~A.~Ivanov, A.~S.~Potapov, T.~P.~Samsonova
\paper Effect of impurity impact ionization on the dynamic characteristics of 4\emph{H}-SiC $p^+$--$n$--$n^+$ diodes at low temperatures (77 K)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 7
\pages 999--1002
\mathnet{http://mi.mathnet.ru/phts7349}
\elib{https://elibrary.ru/item.asp?id=24195234}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 7
\pages 976--979
\crossref{https://doi.org/10.1134/S1063782615070118}
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