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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 7, Pages 1003–1006 (Mi phts7350)  
This article is cited in 7 scientific papers (total in 7 papers)

Semiconductor physics

Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide

T. V. Bez'yazychnayaa, M. V. Bogdanovicha, V. V. Kabanova, D. M. Kabanova, E. V. Lebiadoka, V. V. Parashchuka, A. G. Ryabtseva, G. I. Ryabtseva, P. V. Shpaka, M. A. Shchemeleva, I. A. Andreevb, E. V. Kunitsynab, V. V. Sherstnevb, Yu. P. Yakovlevb

a B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
b Ioffe Institute, St. Petersburg
Full-text PDF (165 kB) Citations (7)
Abstract: The spectral characteristics of light emitting diodes based on a InAs/InAsSb/InAsSbP heterostructure, which emit in a wavelength range of 3.5–4.5 $\mu$m, are investigated experimentally. It is shown that the temperature shift of the maximum emission wavelength of a light emitting diode in the temperature range 80–313 K is 1.8 nm/K. The temperature dependence of the band gap of the InAs$_{0.88}$Sb$_{0.12}$ active layer is described by the Varshni formula with the characteristic parameters: $E_{g0}$ = 0.326 eV, $\alpha$ = 2.917 $\times$ 10$^{-4}$ eV/K, and $\beta$ = 168.83 K. The results of our measurements of the concentrations of carbon dioxide (CO$_2$) using the studied light emitting diodes show the possibility of the reliable detection of CO$_2$ in the concentration range 300–100000 ppm.
Received: 18.12.2014
Accepted: 13.01.2015
English version:
Semiconductors, 2015, Volume 49, Issue 7, Pages 980–983
DOI: https://doi.org/10.1134/S1063782615070052
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: T. V. Bez'yazychnaya, M. V. Bogdanovich, V. V. Kabanov, D. M. Kabanov, E. V. Lebiadok, V. V. Parashchuk, A. G. Ryabtsev, G. I. Ryabtsev, P. V. Shpak, M. A. Shchemelev, I. A. Andreev, E. V. Kunitsyna, V. V. Sherstnev, Yu. P. Yakovlev, “Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide”, Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 1003–1006; Semiconductors, 49:7 (2015), 980–983
Citation in format AMSBIB
\Bibitem{BezBogKab15}
\by T.~V.~Bez'yazychnaya, M.~V.~Bogdanovich, V.~V.~Kabanov, D.~M.~Kabanov, E.~V.~Lebiadok, V.~V.~Parashchuk, A.~G.~Ryabtsev, G.~I.~Ryabtsev, P.~V.~Shpak, M.~A.~Shchemelev, I.~A.~Andreev, E.~V.~Kunitsyna, V.~V.~Sherstnev, Yu.~P.~Yakovlev
\paper Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 7
\pages 1003--1006
\mathnet{http://mi.mathnet.ru/phts7350}
\elib{https://elibrary.ru/item.asp?id=24195235}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 7
\pages 980--983
\crossref{https://doi.org/10.1134/S1063782615070052}
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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