Improvement in the degradation resistance of silicon nanostructures by the deposition of diamond-like carbon films

It is established that the deposition of a diamond-like film onto a structure with silicon nanoclusters in a silicon dioxide matrix yields an increase in the long-wavelength photoluminescence intensity of silicon nanoclusters due to the passivation of active-recombination centers with hydrogen and a shift of the photoluminescence peak to the region of higher photosensitivity of silicon-based solar cells. It is also shown that, due to the deposited diamond-like film, the resistance of such a structure to degradation upon exposure to $\gamma$ radiation is improved, which is also defined by the effect of the passivation of radiation-induced activerecombination centers by hydrogen that is released from the films during treatment.