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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 8, Pages 1120–1123 (Mi phts7369)  
Manufacturing, processing, testing of materials and structures

Site-Controlled Growth of Single InP QDs

A. S. Vlasova, A. M. Mintairovab, N. A. Kalyuzhnyya, S. A. Mintairova, R. A. Saliia, A. I. Denisyukc, R. A. Babuntsa

a Ioffe Institute, St. Petersburg
b Notre Dame University, Notre Dame, IN, 46556, US
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (711 kB)
Abstract: The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate “defects” formed by a focused beam of Ga$^+$ ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 ($\mu$m)$^{-2}$ can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer.
Received: 18.11.2014
Accepted: 27.11.2014
English version:
Semiconductors, 2015, Volume 49, Issue 8, Pages 1095–1098
DOI: https://doi.org/10.1134/S1063782615080230
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Vlasov, A. M. Mintairov, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, A. I. Denisyuk, R. A. Babunts, “Site-Controlled Growth of Single InP QDs”, Fizika i Tekhnika Poluprovodnikov, 49:8 (2015), 1120–1123; Semiconductors, 49:8 (2015), 1095–1098
Citation in format AMSBIB
\Bibitem{VlaMinKal15}
\by A.~S.~Vlasov, A.~M.~Mintairov, N.~A.~Kalyuzhnyy, S.~A.~Mintairov, R.~A.~Salii, A.~I.~Denisyuk, R.~A.~Babunts
\paper Site-Controlled Growth of Single InP QDs
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 8
\pages 1120--1123
\mathnet{http://mi.mathnet.ru/phts7369}
\elib{https://elibrary.ru/item.asp?id=24195255}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 8
\pages 1095--1098
\crossref{https://doi.org/10.1134/S1063782615080230}
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