Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory

The study of the optical properties of ZnO(Se) is a continuation of previous studies of ZnS(O), ZnSe(O), and CdS(O) systems in the context of band anticrossing theory. Selenium ions are implanted into high-purity zinc oxide crystals to a concentration of 10$^{20}$ cm$^{-3}$. The microcathodoluminescence spectra recorded with a scanning electron microscope at a temperature of 100 K provide information from the bulk of the implanted layer. The origin of the orange-red luminescence of ZnO(Se)–Zn layers is clarified. Orangered luminescence is thought to be a result of the formation of a highly mismatched alloy system, in which ZnSe(O) is formed during implantation and radiation annealing. Data suggesting that the green luminescence of pure self-activated ZnO–Zn is the self-activated (SA) emission studied in detail for other II–VI compounds (ZnS(O), ZnSe(O)) and defined by intrinsic defect complexes (A centers) are reported.