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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 9, Pages 1175–1179 (Mi phts7377)  

Electronic properties of semiconductors

Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon $^{29}$Si:B

O. V. Koplaka, E. A. Steinmanb, A. N. Tereshchenkob, R. B. Morgunovac

a Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Chernogolovka, Moscow region
b Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
c Moscow State Humanitarian University named after M. A. Sholokhov
Abstract: A correlation between the temperature dependences of the $D1$-line intensity of dislocation luminescence and the magnetic moment of plastically deformed isotopically enriched crystals $^{29}$Si:B is found. It is established that the magnetic susceptibility of the deformed crystals obtained by integration of the spectra of electron spin resonance and the $D1$-line intensity undergo similar nonmonotonic variations with temperature varying in the range of 20–32 K.
Received: 12.01.2015
Accepted: 06.02.2015
English version:
Semiconductors, 2015, Volume 49, Issue 9, Pages 1140–1144
DOI: https://doi.org/10.1134/S1063782615090158
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. V. Koplak, E. A. Steinman, A. N. Tereshchenko, R. B. Morgunov, “Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon $^{29}$Si:B”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1175–1179; Semiconductors, 49:9 (2015), 1140–1144
Citation in format AMSBIB
\Bibitem{KopSteTer15}
\by O.~V.~Koplak, E.~A.~Steinman, A.~N.~Tereshchenko, R.~B.~Morgunov
\paper Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon $^{29}$Si:B
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 9
\pages 1175--1179
\mathnet{http://mi.mathnet.ru/phts7377}
\elib{https://elibrary.ru/item.asp?id=24195264}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 9
\pages 1140--1144
\crossref{https://doi.org/10.1134/S1063782615090158}
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