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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 9, Pages 1175–1179
(Mi phts7377)
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Electronic properties of semiconductors
Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon $^{29}$Si:B
O. V. Koplaka, E. A. Steinmanb, A. N. Tereshchenkob, R. B. Morgunovac a Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Chernogolovka, Moscow region
b Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
c Moscow State Humanitarian University named after M. A. Sholokhov
Abstract:
A correlation between the temperature dependences of the $D1$-line intensity of dislocation luminescence and the magnetic moment of plastically deformed isotopically enriched crystals $^{29}$Si:B is found. It is established that the magnetic susceptibility of the deformed crystals obtained by integration of the spectra of electron spin resonance and the $D1$-line intensity undergo similar nonmonotonic variations with temperature varying in the range of 20–32 K.
Received: 12.01.2015 Accepted: 06.02.2015
Citation:
O. V. Koplak, E. A. Steinman, A. N. Tereshchenko, R. B. Morgunov, “Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon $^{29}$Si:B”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1175–1179; Semiconductors, 49:9 (2015), 1140–1144
Linking options:
https://www.mathnet.ru/eng/phts7377 https://www.mathnet.ru/eng/phts/v49/i9/p1175
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