Features of the electrical conductivity of TlInSe$_2$ under photoexcitation and X-ray excitation

The current–voltage characteristics of TlInSe$_2$ crystals under photoexcitation and X-ray excitation are studied. The parameters of the trap, which are equal to $N_t$ = 5 $\times$ 10$^{16}$ cm$^{-3}$, $n_t$ = 4.5 $\cdot$ 10$^{12}$ cm$^{-3}$, and $\Delta E_t$ = 0.42 eV, are calculated. The calculated values of $N_t$ and $n_t$ before and after X-ray excitation are equal to 3 $\times$ 10$^{16}$ cm$^{-3}$ and 3.2 $\times$ 10$^{12}$ cm$^{-3}$, respectively. The dependences of the X-ray conductances on the radiation intensity are studied for TlInSe$_2$ crystals at various accelerating voltages $V_a$ and it is determined that the X-ray conductance $K_\sigma$ decreases exponentially as the accelerating voltage $V_a$ and radiation dose increase.