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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 9, Pages 1233–1237 (Mi phts7389)  
Semiconductor structures, low-dimensional systems, quantum phenomena

On the cascade capture of electrons at donors in GaAs quantum wells

V. Ya. Aleshkinab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b National Research Lobachevsky State University of Nizhny Novgorod
Full-text PDF (195 kB)
Abstract: The impact parameter for the cascade capture of electrons at a charged donor in a GaAs quantum well is calculated. A simple approximate analytical expression for the impact parameter is suggested. The temperature dependence of the impact parameter for the case of electron scattering by the piezoelectric potential of acoustic phonons is determined.
Received: 12.01.2015
Accepted: 25.02.2015
English version:
Semiconductors, 2015, Volume 49, Issue 9, Pages 1197–1201
DOI: https://doi.org/10.1134/S106378261509002X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, “On the cascade capture of electrons at donors in GaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1233–1237; Semiconductors, 49:9 (2015), 1197–1201
Citation in format AMSBIB
\Bibitem{Ale15}
\by V.~Ya.~Aleshkin
\paper On the cascade capture of electrons at donors in GaAs quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 9
\pages 1233--1237
\mathnet{http://mi.mathnet.ru/phts7389}
\elib{https://elibrary.ru/item.asp?id=24195278}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 9
\pages 1197--1201
\crossref{https://doi.org/10.1134/S106378261509002X}
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