Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 9, Pages 1238–1242 (Mi phts7390)  
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor structures, low-dimensional systems, quantum phenomena

Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy

L. P. Avakyantsa, P. Yu. Bokova, G. B. Galievb, I. P. Kazakovc, A. V. Chervyakova

a Lomonosov Moscow State University, Faculty of Physics
b V. G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
c P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Full-text PDF (405 kB) Citations (1)
Abstract: GaAs/AlGaAs quantum-well heterostructures with well widths from 20 to 35 nm are investigated by photoreflectance spectroscopy. The broadening of spectral lines related to band-to-band transitions increases with the transition energy and decreases with the well width. The observed decrease in the broadening parameter with increasing well width is explained in terms of spatial inhomogeneity of the heterointerfaces. According to the experimental data, the interface inhomogeneity in the structures under study is 0.34–0.39 nm (1.3–1.4 monolayers).
Received: 17.02.2015
Accepted: 25.02.2015
English version:
Semiconductors, 2015, Volume 49, Issue 9, Pages 1202–1206
DOI: https://doi.org/10.1134/S1063782615090031
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. P. Avakyants, P. Yu. Bokov, G. B. Galiev, I. P. Kazakov, A. V. Chervyakov, “Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1238–1242; Semiconductors, 49:9 (2015), 1202–1206
Citation in format AMSBIB
\Bibitem{AvaBokGal15}
\by L.~P.~Avakyants, P.~Yu.~Bokov, G.~B.~Galiev, I.~P.~Kazakov, A.~V.~Chervyakov
\paper Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 9
\pages 1238--1242
\mathnet{http://mi.mathnet.ru/phts7390}
\elib{https://elibrary.ru/item.asp?id=24195279}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 9
\pages 1202--1206
\crossref{https://doi.org/10.1134/S1063782615090031}
Linking options:
  • https://www.mathnet.ru/eng/phts7390
  • https://www.mathnet.ru/eng/phts/v49/i9/p1238
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025