Defect-related luminescence in silicon $p^+$–$n$ junctions

Ultra-shallow $p^+$–$n$ junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into $n$-Si (100) substrates upon their preliminary oxidation and the opening of windows in SiO$_2$ by electron lithography and reactive ion etching are examined. The electroand photoluminescence spectra measured in the study demonstrate emission in the range 1–1.6 $\mu$m, which is indicative of the presence of a high concentration of defects that probably appear as a result of the amorphizing effect of ions in the etching stage.