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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 9, Pages 1273–1277
(Mi phts7395)
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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor physics
Effect of catalytic surface modification on the gas sensitivity of SnO$_2$+3% SiO$_2$ films
S. I. Rembezaa, E. S. Rembezaa, N. N. Koshelevaa, V. M. Al Tameemib a Voronezh State Technical University
b University of Diyala, Daila, Republic Iraq
Abstract:
Thin SnO$_2$+3% SiO$_2$ (250 nm) films grown by magnetron sputtering in a controlled Ar + O$_2$ atmosphere are used as sensor elements in a gas sensor fabricated by microelectronics technology. The sensor contains two sensitive elements, one of which is used as a control element; the surface of the other was coated with an aqueous solution (3, 6, 9, 12 mmol) of silver nitrate Ag(NO$_3$) and palladium chloride PdCl$_2$. It is found that surface modification by catalysts lowers the temperature of the maximum gas sensitivity of SnO$_2$+3% SiO$_2$ by 100–200$^\circ$C; in some cases, this procedure also increases the maximum gas sensitivity several times.
Received: 15.01.2015 Accepted: 05.02.2015
Citation:
S. I. Rembeza, E. S. Rembeza, N. N. Kosheleva, V. M. Al Tameemi, “Effect of catalytic surface modification on the gas sensitivity of SnO$_2$+3% SiO$_2$ films”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1273–1277; Semiconductors, 49:9 (2015), 1237–1241
Linking options:
https://www.mathnet.ru/eng/phts7395 https://www.mathnet.ru/eng/phts/v49/i9/p1273
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