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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 9, Pages 1278–1281 (Mi phts7396)  
This article is cited in 20 scientific papers (total in 20 papers)

Semiconductor physics

Characterization of field-emission cathodes based on graphene films on SiC

R. V. Konakovaa, O. B. Okhrimenkoa, A. M. Svetlichnyib, O. A. Ageevb, E. Yu. Volkovb, A. S. Kolomiytsevb, I. L. Zhityaevb, O. B. Spiridonovc

a Institute of Semiconductor Physics NAS, Kiev
b Institute of Nanotechnologies, Electronics and Equipment Engineering
c Southern Laser Technology Center, Taganrog
Full-text PDF (391 kB) Citations (20)
Abstract: The properties of a point field-emission cathode representing a structure in the form of a silicon carbide tip coated with a thin graphene film are assessed. For the point cathode with the graphene coating, the current–voltage characteristics are constructed in the Fowler–Nordheim coordinates; the work functions $\varphi$ of the point cathode are calculated by their slope. The possibility of forming heavily doped $n^+$-SiC on the point surface by the sublimation of low-threshold field emission cathodes with low threshold electric fields and field-emission currents is shown.
Received: 04.02.2014
Accepted: 19.02.2015
English version:
Semiconductors, 2015, Volume 49, Issue 9, Pages 1242–1245
DOI: https://doi.org/10.1134/S1063782615090146
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. V. Konakova, O. B. Okhrimenko, A. M. Svetlichnyi, O. A. Ageev, E. Yu. Volkov, A. S. Kolomiytsev, I. L. Zhityaev, O. B. Spiridonov, “Characterization of field-emission cathodes based on graphene films on SiC”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1278–1281; Semiconductors, 49:9 (2015), 1242–1245
Citation in format AMSBIB
\Bibitem{KonOkhSve15}
\by R.~V.~Konakova, O.~B.~Okhrimenko, A.~M.~Svetlichnyi, O.~A.~Ageev, E.~Yu.~Volkov, A.~S.~Kolomiytsev, I.~L.~Zhityaev, O.~B.~Spiridonov
\paper Characterization of field-emission cathodes based on graphene films on SiC
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 9
\pages 1278--1281
\mathnet{http://mi.mathnet.ru/phts7396}
\elib{https://elibrary.ru/item.asp?id=24195285}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 9
\pages 1242--1245
\crossref{https://doi.org/10.1134/S1063782615090146}
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  • https://www.mathnet.ru/eng/phts/v49/i9/p1278
    • This publication is cited in the following 20 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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