|
|
Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 10, Pages 1297–1303
(Mi phts7398)
|
|
|
|
This article is cited in 9 scientific papers (total in 9 papers)
Non-electronic properties of semiconductors (atomic structure, diffusion)
Structural properties of ZnO:Al films produced by the sol–gel technique
E. P. Zaretskayaa, V. F. Gremenoka, A. V. Semchenkob, V. V. Sidskyb, R. L. Juškėnasc a Scientific-Practical Materials Research Centre of NAS of Belarus
b Gomel State University named after Francisk Skorina
c State Research Institute Center for Physical Sciences and Technology, Vilnius, LT-01108, Lithuania
Abstract:
ZnO:Al films are produced by sol–gel deposition at temperatures of 350–550$^\circ$C, using different types of reagents. Atomic-force microscopy, X-ray diffraction analysis, Raman spectroscopy, and optical transmittance measurements are used to study the dependence of the structural, morphological, and optical properties of the ZnO:Al coatings on the conditions of deposition. The optical conditions for the production of ZnO:Al layers with preferred orientation in the [001] direction and distinguished by small surface roughness are established. The layers produced in the study possess optical transmittance at a level of up to 95% in a wide spectral range and can be used in optoelectronic devices.
Received: 12.01.2015 Accepted: 05.02.2015
Citation:
E. P. Zaretskaya, V. F. Gremenok, A. V. Semchenko, V. V. Sidsky, R. L. Juškėnas, “Structural properties of ZnO:Al films produced by the sol–gel technique”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1297–1303; Semiconductors, 49:10 (2015), 1253–1258
Linking options:
https://www.mathnet.ru/eng/phts7398 https://www.mathnet.ru/eng/phts/v49/i10/p1297
|
|