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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 10, Pages 1325–1328
(Mi phts7402)
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This article is cited in 1 scientific paper (total in 1 paper)
Electronic properties of semiconductors
Investigation of current instabilities in Ìn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Ìn$_4$Si$_7$ and Ìn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Ì heterojunctions
T. S. Kamilova, L. L. Aksenovab, B. Z. Sharipova, I. V. Ernsta a Tashkent State Technical University named after Islam Karimov
b Institute of Cristallography Russian Academy of Sciences, Moscow
Abstract:
The features of current instabilities in Ìn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Ìn$_4$Si$_7$ and Ìn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Ì heterojunctions are investigated at low temperatures and upon “intrinsic” illumination with $h\nu>$ 1.12 eV. It is shown that low-frequency self-oscillations related to intensification and quenching of the photoconductivity can be obtained at high applied voltages.
Received: 24.02.2015 Accepted: 12.03.2015
Citation:
T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov, I. V. Ernst, “Investigation of current instabilities in Ìn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Ìn$_4$Si$_7$ and Ìn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Ì heterojunctions”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1325–1328; Semiconductors, 49:10 (2015), 1281–1284
Linking options:
https://www.mathnet.ru/eng/phts7402 https://www.mathnet.ru/eng/phts/v49/i10/p1325
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