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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 10, Pages 1335–1338 (Mi phts7404)  
Electronic properties of semiconductors

Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon

V. F. Reutova, S. N. Dmitrieva, A. S. Sokhatskiia, A. G. Zaluzhnyb

a Joint Institute for Nuclear Research, Flerov Laboratory of Nuclear Reactions
b National Engineering Physics Institute "MEPhI", Moscow
Full-text PDF (958 kB)
Abstract: Understanding the behavior of helium in solids under conditions of intense ionizing radiation is of particular interest in solving many problems of nuclear, fusion, and space materials science and also in microelectronics. The observed effect of suppressing the formation of helium blisters on the surface of helium ion-doped silicon as a result of irradiation with high-energy bismuth ions is reported in this publication. It is suggested that a possible decrease in the concentration of helium atoms in silicon is due to their radiationinduced desorption from the area of doping in terms of the high-impact ionization of bismuth ions.
Received: 17.03.2015
Accepted: 26.03.2015
English version:
Semiconductors, 2015, Volume 49, Issue 10, Pages 1290–1293
DOI: https://doi.org/10.1134/S106378261510022X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. F. Reutov, S. N. Dmitriev, A. S. Sokhatskii, A. G. Zaluzhny, “Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1335–1338; Semiconductors, 49:10 (2015), 1290–1293
Citation in format AMSBIB
\Bibitem{ReuDmiSok15}
\by V.~F.~Reutov, S.~N.~Dmitriev, A.~S.~Sokhatskii, A.~G.~Zaluzhny
\paper Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 10
\pages 1335--1338
\mathnet{http://mi.mathnet.ru/phts7404}
\elib{https://elibrary.ru/item.asp?id=24195294}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 10
\pages 1290--1293
\crossref{https://doi.org/10.1134/S106378261510022X}
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