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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 10, Pages 1376–1378 (Mi phts7412)  
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor structures, low-dimensional systems, quantum phenomena

Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms

M. K. Bakhadyrkhanov, S. B. Isamov, H. M. Iliev, A. U. Kamalov

Tashkent State Technical University named after Islam Karimov
Full-text PDF (150 kB) Citations (1)
Abstract: It is shown that it is possible to considerably increase the lifetime of holes ($\tau\approx$ 10$^3$ s) in silicon with multicharged nanoclusters of manganese atoms. It is established that the long lifetime of holes ($\tau\approx$ 10$^0$–10$^3$ s) is practically retained right up to $T$ = 250 K. Such materials can be used in the development of more effective photoelements and photodetectors of infrared (IR) radiation.
Received: 09.02.2015
Accepted: 13.03.2015
English version:
Semiconductors, 2015, Volume 49, Issue 10, Pages 1332–1334
DOI: https://doi.org/10.1134/S1063782615100024
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. K. Bakhadyrkhanov, S. B. Isamov, H. M. Iliev, A. U. Kamalov, “Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1376–1378; Semiconductors, 49:10 (2015), 1332–1334
Citation in format AMSBIB
\Bibitem{BakIsaIli15}
\by M.~K.~Bakhadyrkhanov, S.~B.~Isamov, H.~M.~Iliev, A.~U.~Kamalov
\paper Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 10
\pages 1376--1378
\mathnet{http://mi.mathnet.ru/phts7412}
\elib{https://elibrary.ru/item.asp?id=24195302}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 10
\pages 1332--1334
\crossref{https://doi.org/10.1134/S1063782615100024}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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