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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 10, Pages 1429–1433 (Mi phts7423)  
This article is cited in 11 scientific papers (total in 11 papers)

Manufacturing, processing, testing of materials and structures

Properties of AlN films deposited by reactive ion-plasma sputtering

N. A. Bert, A. D. Bondarev, V. V. Zolotarev, D. A. Kirilenko, Ya. V. Lubyanskiy, A. V. Lyutetskiy, S. O. Slipchenko, A. N. Petrunov, N. A. Pikhtin, K. R. Ayusheva, I. N. Arsent'ev, I. S. Tarasov

Ioffe Institute, St. Petersburg
Full-text PDF (748 kB) Citations (11)
Abstract: The properties of SiO$_2$, Al$_2$O$_3$, and AlN dielectric coatings deposited by reactive ion-plasma sputtering are studied. The refractive indices of the dielectric coatings are determined by optical ellipsometry. It is shown that aluminum nitride is the optimal material for achieving maximum illumination of the output mirror of a semiconductor laser. A crystalline phase with a hexagonal atomic lattice and oxygen content of up to 10 at% is found by transmission electron microscopy in the aluminum-nitride films. It is found that a decrease in the concentration of residual oxygen in the chamber of the reactive ion-plasma sputtering installation makes it possible to eliminate the appearance of vertical pores in the bulk of the aluminum-nitride film.
Received: 01.04.2015
Accepted: 09.04.2015
English version:
Semiconductors, 2015, Volume 49, Issue 10, Pages 1383–1387
DOI: https://doi.org/10.1134/S1063782615100036
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Bert, A. D. Bondarev, V. V. Zolotarev, D. A. Kirilenko, Ya. V. Lubyanskiy, A. V. Lyutetskiy, S. O. Slipchenko, A. N. Petrunov, N. A. Pikhtin, K. R. Ayusheva, I. N. Arsent'ev, I. S. Tarasov, “Properties of AlN films deposited by reactive ion-plasma sputtering”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1429–1433; Semiconductors, 49:10 (2015), 1383–1387
Citation in format AMSBIB
\Bibitem{BerBonZol15}
\by N.~A.~Bert, A.~D.~Bondarev, V.~V.~Zolotarev, D.~A.~Kirilenko, Ya.~V.~Lubyanskiy, A.~V.~Lyutetskiy, S.~O.~Slipchenko, A.~N.~Petrunov, N.~A.~Pikhtin, K.~R.~Ayusheva, I.~N.~Arsent'ev, I.~S.~Tarasov
\paper Properties of AlN films deposited by reactive ion-plasma sputtering
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 10
\pages 1429--1433
\mathnet{http://mi.mathnet.ru/phts7423}
\elib{https://elibrary.ru/item.asp?id=24195314}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 10
\pages 1383--1387
\crossref{https://doi.org/10.1134/S1063782615100036}
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    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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