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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 11, Pages 1448–1452
(Mi phts7426)
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This article is cited in 2 scientific papers (total in 2 papers)
XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015
Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy
A. S. Bolshakova, V. V. Chaldyshevabc, A. V. Babichevabd, D. A. Kudriashovb, A. S. Gudovskikhbe, I. A. Morozovb, M. S. Sobolevb, E. V. Nikitinab a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c Peter the Great St. Petersburg Polytechnic University
d Connector Optics LLC, St. Petersburg
e Saint Petersburg Electrotechnical University "LETI"
Abstract:
A periodic Bragg heterostructure with three ultrathin InAs/GaAs quantum wells in a period is fabricated and studied. The splitting energy of exciton transitions in quantum wells is determined by the electroreflectance- spectroscopy method and numerical quantum-mechanical calculation. The significant influence of interference effects on individual peak areas in the electroreflectance spectrum is detected.
Received: 22.04.2015 Accepted: 12.05.2015
Citation:
A. S. Bolshakov, V. V. Chaldyshev, A. V. Babichev, D. A. Kudriashov, A. S. Gudovskikh, I. A. Morozov, M. S. Sobolev, E. V. Nikitina, “Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1448–1452; Semiconductors, 49:11 (2015), 1400–1404
Linking options:
https://www.mathnet.ru/eng/phts7426 https://www.mathnet.ru/eng/phts/v49/i11/p1448
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