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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 11, Pages 1463–1468 (Mi phts7429)  
This article is cited in 24 scientific papers (total in 24 papers)

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

D. V. Yurasovab, A. I. Bobrovb, V. M. Daniltseva, A. V. Novikovab, D. A. Pavlovb, E. V. Skorokhodova, M. V. Shaleeva, P. A. Yuninab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (499 kB) Citations (24)
Abstract: Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 $\mu$m with a low threading dislocation density on the order of 10$^7$ cm$^{-2}$and a root mean square roughness of less than 1 nm are obtained.
Received: 22.04.2015
Accepted: 12.05.2015
English version:
Semiconductors, 2015, Volume 49, Issue 11, Pages 1415–1420
DOI: https://doi.org/10.1134/S1063782615110263
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, P. A. Yunin, “Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1463–1468; Semiconductors, 49:11 (2015), 1415–1420
Citation in format AMSBIB
\Bibitem{YurBobDan15}
\by D.~V.~Yurasov, A.~I.~Bobrov, V.~M.~Daniltsev, A.~V.~Novikov, D.~A.~Pavlov, E.~V.~Skorokhodov, M.~V.~Shaleev, P.~A.~Yunin
\paper Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 11
\pages 1463--1468
\mathnet{http://mi.mathnet.ru/phts7429}
\elib{https://elibrary.ru/item.asp?id=24195320}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 11
\pages 1415--1420
\crossref{https://doi.org/10.1134/S1063782615110263}
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    • This publication is cited in the following 24 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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