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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 11, Pages 1489–1491
(Mi phts7434)
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This article is cited in 1 scientific paper (total in 1 paper)
XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015
On a semiconductor laser with a $p$–$n$ tunnel junction with radiation emission through the substrate
D. A. Kolpakova, B. N. Zvonkova, S. M. Nekorkina, N. V. Dikarevaa, V. Ya. Aleshkinbc, A. A. Dubinovbc a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c Lobachevsky State University of Nizhny Novgorod
Abstract:
A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered.
Received: 22.04.2015 Accepted: 12.05.2015
Citation:
D. A. Kolpakov, B. N. Zvonkov, S. M. Nekorkin, N. V. Dikareva, V. Ya. Aleshkin, A. A. Dubinov, “On a semiconductor laser with a $p$–$n$ tunnel junction with radiation emission through the substrate”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1489–1491; Semiconductors, 49:11 (2015), 1440–1442
Linking options:
https://www.mathnet.ru/eng/phts7434 https://www.mathnet.ru/eng/phts/v49/i11/p1489
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