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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 11, Pages 1492–1496 (Mi phts7435)  
XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Hodographs in diode-structure diagnostics

V. B. Shmaginab, K. E. Kudryavtsevab, A. V. Novikovab, D. V. Shengurovab, D. V. Yurasovab, Z. F. Krasil'nikab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (228 kB)
Abstract: The use of hodographs in the diagnostics of silicon diode structures is illustrated. This approach minimizes the error in determining the capacitance of the $p$–$n$ junction due to masking elements that distort direct measurements in parallel and serial equivalent circuits.
Received: 22.04.2015
Accepted: 12.05.2015
English version:
Semiconductors, 2015, Volume 49, Issue 11, Pages 1443–1447
DOI: https://doi.org/10.1134/S1063782615110196
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. B. Shmagin, K. E. Kudryavtsev, A. V. Novikov, D. V. Shengurov, D. V. Yurasov, Z. F. Krasil'nik, “Hodographs in diode-structure diagnostics”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1492–1496; Semiconductors, 49:11 (2015), 1443–1447
Citation in format AMSBIB
\Bibitem{ShmKudNov15}
\by V.~B.~Shmagin, K.~E.~Kudryavtsev, A.~V.~Novikov, D.~V.~Shengurov, D.~V.~Yurasov, Z.~F.~Krasil'nik
\paper Hodographs in diode-structure diagnostics
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 11
\pages 1492--1496
\mathnet{http://mi.mathnet.ru/phts7435}
\elib{https://elibrary.ru/item.asp?id=24195327}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 11
\pages 1443--1447
\crossref{https://doi.org/10.1134/S1063782615110196}
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