Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

The comparative investigation of circularly polarized electroluminescence in Zener diodes based on InGaAs/$n$-GaAs/$n^+$-GaAs/GaMnAs and InGaAs/$n$-GaAs/$n^+$-GaAs/GaMnSb is carried out. It is established that the circularly polarized electroluminescence is associated with the spin injection of electrons from a ferromagnetic semiconductor layer. The luminescence parameters are determined by the properties of these layers. It is shown that the ferromagnetic properties of the GaMnSb layer allow us to obtain circularly polarized emission at room temperature from InGaAs/$n$-GaAs/$n^+$-GaAs/GaMnSb heterostructures.