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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 11, Pages 1507–1515 (Mi phts7438)  
This article is cited in 4 scientific papers (total in 4 papers)

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

On the radiation resistance of planar Gunn diodes with $\delta$-doped layers

E. S. Obolenskayaa, A. Yu. Churina, S. V. Obolenskya, A. V. Murelb, V. I. Shashkinb

a National Research Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (370 kB) Citations (4)
Abstract: The radiation resistance of planar Gunn diodes is investigated. Based on the results of measurements of the pulsed current–voltage characteristics and computer simulations it is shown that the use of $\delta$ layers of doping impurities contributes to the higher radiation resistance of planar diodes by an order of magnitude compared to conventional Gunn diodes. The results of this study make it possible to formulate methodical guidelines to reduce the amount of computational and experimental studies without a considerable decrease in their informativity.
Received: 22.04.2015
Accepted: 12.05.2015
English version:
Semiconductors, 2015, Volume 49, Issue 11, Pages 1459–1467
DOI: https://doi.org/10.1134/S1063782615110160
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. S. Obolenskaya, A. Yu. Churin, S. V. Obolensky, A. V. Murel, V. I. Shashkin, “On the radiation resistance of planar Gunn diodes with $\delta$-doped layers”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1507–1515; Semiconductors, 49:11 (2015), 1459–1467
Citation in format AMSBIB
\Bibitem{OboChuObo15}
\by E.~S.~Obolenskaya, A.~Yu.~Churin, S.~V.~Obolensky, A.~V.~Murel, V.~I.~Shashkin
\paper On the radiation resistance of planar Gunn diodes with $\delta$-doped layers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 11
\pages 1507--1515
\mathnet{http://mi.mathnet.ru/phts7438}
\elib{https://elibrary.ru/item.asp?id=24195330}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 11
\pages 1459--1467
\crossref{https://doi.org/10.1134/S1063782615110160}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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