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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 12, Pages 1585–1592
(Mi phts7450)
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This article is cited in 4 scientific papers (total in 4 papers)
XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015
High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures
A. S. Puzanova, S. V. Obolenskya, V. A. Kozlovab, E. V. Volkovaa, D. G. Pavel'eva a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
The processes of the formation and stabilization of a radiation-induced defect cluster upon the arrival of a fast neutron to the space-charge region of a semiconductor diode are analyzed. The current pulse formed by secondary electrons is calculated and the spectrum of the signal generated by the diode (detector) under the action of an instantaneous neutron flux of the fission spectrum is determined. The possibility of experimental detection of the picosecond radiation-induced transition processes is discussed.
Received: 22.04.2015 Accepted: 15.05.2015
Citation:
A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, E. V. Volkova, D. G. Pavel'ev, “High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1585–1592; Semiconductors, 49:12 (2015), 1537–1544
Linking options:
https://www.mathnet.ru/eng/phts7450 https://www.mathnet.ru/eng/phts/v49/i12/p1585
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