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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 12, Pages 1593–1597 (Mi phts7451)  
This article is cited in 10 scientific papers (total in 10 papers)

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

Yu. G. Arapova, S. V. Gudinaa, V. N. Neverova, S. M. Podgornykhab, M. R. Popova, G. I. Kharusa, N. G. Shelushininaa, M. V. Yakuninab, N. N. Mikhailovcd, S. A. Dvoretskiice

a Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
d Novosibirsk State University
e Tomsk State University
Full-text PDF (251 kB) Citations (10)
Abstract: The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is $d$ = 20.3 nm) are measured in the quantum-Hall-effect regime at $T$ = 2–50 K in magnetic fields up to $B$ = 9 T. Analysis of the temperature dependences of conductivity in the transition region between the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride.
Received: 22.04.2015
Accepted: 12.05.2015
English version:
Semiconductors, 2015, Volume 49, Issue 12, Pages 1545–1549
DOI: https://doi.org/10.1134/S1063782615120039
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, M. R. Popov, G. I. Kharus, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretskii, “Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum”, Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1593–1597; Semiconductors, 49:12 (2015), 1545–1549
Citation in format AMSBIB
\Bibitem{AraGudNev15}
\by Yu.~G.~Arapov, S.~V.~Gudina, V.~N.~Neverov, S.~M.~Podgornykh, M.~R.~Popov, G.~I.~Kharus, N.~G.~Shelushinina, M.~V.~Yakunin, N.~N.~Mikhailov, S.~A.~Dvoretskii
\paper Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 12
\pages 1593--1597
\mathnet{http://mi.mathnet.ru/phts7451}
\elib{https://elibrary.ru/item.asp?id=24195343}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 12
\pages 1545--1549
\crossref{https://doi.org/10.1134/S1063782615120039}
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    • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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