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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 12, Pages 1598–1604 (Mi phts7452)  

This article is cited in 1 scientific paper (total in 1 paper)

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Universal properties of materials with the Dirac dispersion relation of low-energy excitations

A. P. Protogenova, E. V. Chulkovbcd

a Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
b Saint Petersburg State University
c Tomsk State University
d Departamento de Fisica de Materiales, Universidad del Pais Vasco, 20080 San Sebastian/Donostia, Spain
Full-text PDF (274 kB) Citations (1)
Abstract: The $N$-terminal scheme is considered for studying the contribution of edge states to the response of a two-dimensional topological insulator. A universal distribution of the nonlocal resistance between terminals is determined in the ballistic transport approach. The calculated responses are identical to experimentally observed values. The spectral properties of surface electronic states in Weyl semimetals are also studied. The density of surface states is accurately determined. The universal behavior of these characteristics is a distinctive feature of the considered Dirac materials which can be used in practical applications.
Received: 22.04.2015
Accepted: 12.05.2015
English version:
Semiconductors, 2015, Volume 49, Issue 12, Pages 1550–1556
DOI: https://doi.org/10.1134/S1063782615120143
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. P. Protogenov, E. V. Chulkov, “Universal properties of materials with the Dirac dispersion relation of low-energy excitations”, Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1598–1604; Semiconductors, 49:12 (2015), 1550–1556
Citation in format AMSBIB
\Bibitem{ProЧул15}
\by A.~P.~Protogenov, E.~V.~Chulkov
\paper Universal properties of materials with the Dirac dispersion relation of low-energy excitations
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 12
\pages 1598--1604
\mathnet{http://mi.mathnet.ru/phts7452}
\elib{https://elibrary.ru/item.asp?id=24195344}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 12
\pages 1550--1556
\crossref{https://doi.org/10.1134/S1063782615120143}
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  • https://www.mathnet.ru/eng/phts/v49/i12/p1598
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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