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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 12, Pages 1640–1643 (Mi phts7459)  
This article is cited in 3 scientific papers (total in 3 papers)

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures

N. S. Volkovaab, A. P. Gorshkovc, A. V. Zdoroveyshcheva, L. A. Istominb, S. B. Levichevb

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Chemistry Research Institute of N. I. Lobachevsky, State University of Nizhny Novgorod
c Lobachevsky State University of Nizhny Novgorod
Full-text PDF (148 kB) Citations (3)
Abstract: The systematic features of the inf luence of defect formation during the deposition of a cobalt contact on the optoelectronic characteristics of structures containing InAs/GaAs quantum dots and In$_x$Ga$_{1-x}$As/GaAs quantum wells are studied. From analysis of the temperature dependences of the photosensitivity of the InAs/GaAs quantum-dot structures, the values of the resultant recombination lifetime of photoexcited charge carriers in quantum dots at different conditions of Co deposition and at different structural parameters are determined.
Received: 22.04.2015
Accepted: 12.05.2015
English version:
Semiconductors, 2015, Volume 49, Issue 12, Pages 1592–1595
DOI: https://doi.org/10.1134/S1063782615120246
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. S. Volkova, A. P. Gorshkov, A. V. Zdoroveyshchev, L. A. Istomin, S. B. Levichev, “Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures”, Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1640–1643; Semiconductors, 49:12 (2015), 1592–1595
Citation in format AMSBIB
\Bibitem{VolGorZdo15}
\by N.~S.~Volkova, A.~P.~Gorshkov, A.~V.~Zdoroveyshchev, L.~A.~Istomin, S.~B.~Levichev
\paper Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 12
\pages 1640--1643
\mathnet{http://mi.mathnet.ru/phts7459}
\elib{https://elibrary.ru/item.asp?id=24195351}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 12
\pages 1592--1595
\crossref{https://doi.org/10.1134/S1063782615120246}
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  • https://www.mathnet.ru/eng/phts/v49/i12/p1640
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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